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RMPA1963
PRELIMINARY
May 2005
Features
38% CDMA/WCDMA efficiency at +28 dBm Pout 14% CDMA/WCDMA efficiency (85 mA total current) at +16 dBm Pout Meets HSDPA performance requirements Linear operation in low-power mode up to +19 dBm Low quiescent current (Iccq): 25 mA in low-power mode Single positive-supply operation with low power and shutdown modes * 3.4V typical Vcc operation * Low Vref (2.85V) compatible with advanced handset chipsets Compact Lead-free compliant LCC package - (4.0 X 4.0 x 1.5 mm nominal) Industry standard pinout Internally matched to 50 Ohms and DC blocked RF input/output Meets IS-95/CDMA2000-1XRTT/WCDMA performance requirements
General Description
The RMPA1963 Power Amplifier Module (PAM) is Fairchild's latest innovation in 50 Ohm matched, surface mount modules targeting US-PCS CDMA/WCDMA/HSDPA and Wireless Local Loop (WLL) applications. Answering the call for ultra-low DC power consumption and extended battery life in portable electronics, the RMPA1963 uses novel proprietary circuitry to dramatically reduce amplifier current at low to medium RF output power levels (< +16 dBm), where the handset most often operates. A simple two-state Vmode control is all that is needed to reduce operating current by more than 50% at 16 dBm output power, and quiescent current (Iccq) by as much as 70% compared to traditional power-saving methods. No additional circuitry, such as DC-to-DC converters, are required to achieve this remarkable improvement in amplifier efficiency. Further, the 4x4x1.5 mm LCC package is pin-compatible and a drop-in replacement for last generation 4x4 mm PAMs widely used today, minimizing the design time to apply this performanceenhancing technology. The multi-stage GaAs Microwave Monolithic Integrated Circuit (MMIC) is manufactured using Fairchild RF's InGaP Heterojunction Bipolar Transistor (HBT) process.
Device
Functional Block Diagram
(Top View) MMIC
Vcc1 1 RF IN GND Vmode Vref
10 Vcc2
INPUT MATCH OUTPUT MATCH BIAS/MODE SWITCH
2 3 4 5
9 GND 8 RF OUT 7 GND 6 GND
11 (paddle ground on package bottom)
(c)2005 Fairchild Semiconductor Corporation
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RMPA1963
Rev. H
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RMPA1963 US-PCS CDMA, CDMA2000-1X and WCDMA Power Amplifier Module
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US-PCS CDMA, CDMA2000-1X and WCDMA Power Amplifier Module (Preliminary)
RMPA1963
Absolute Maximum Ratings1
Symbol
Vcc1, Vcc2 Vref Vmode Pin Tstg Supply Voltages Reference Voltage Power Control Voltage RF Input Power Storage Temperature
Parameter
Value
5.0 2.6 to 3.5 3.5 +10 -55 to +150
Units
V V V dBm C
Note: 1. No permanent damage with one parameter set at extreme limit. Other parameters set to typical values.
Electrical Characteristics1
Symbol
f Gp Po PAEd Itot CDMA ACPR1 ACPR2 WCDMA ACLR1 ACLR2
Parameter
Operating Frequency Power Gain Linear Output Power PAEd (digital) @ +28dBm PAEd (digital) @ +16dBm High Power Total Current Low Power Total Current Adjacent Channel Power Ratio 1.25MHz Offset 2.25MHz Offset Adjacent Channel Leakage Ratio 5.00MHz Offset 10.00MHz Offset
Min
1850
Typ
Max
1910
Units
MHz dB dB dBm dBm
Comments
CDMA/WCDMA Operation 28 23 28 16 39 13 470 85 -50 -55 -60 -65 Po=+28dBm; Vmode=0V Po=+16dBm; Vmode2.0V Vmode=0V Vmode2.0V Vmode=0V Vmode2.0V Po=+28dBm, Vmode=0V Po=+16dBm, Vmode2.0V IS-95 A/B Modulation dBc dBc dBc dBc Po=+28dBm; Vmode=0V Po=+16dBm; Vmode2.0V Po=+28dBm; Vmode=0V Po=+16dBm; Vmode2.0V WCDMA Modulation 3GPP 3.2 03-00 DPCCH +1 DCDCH -40 -43 -53 -55 General Characteristics VSWR NF Rx No 2fo 3fo-5fo S Tc Iccq Iref Icc(off) Input Impedance Noise Figure Receive Band Noise Power Harmonic Suppression Harmonic Suppression Spurious Outputs2,3 Ruggedness w/ Load Mismatch3 Case Operating Temperature Quiescent Current Reference Current Shutdown Leakage Current -30 25 7 1 5 DC Characteristics mA mA A Vmode2.0V Po+28dBm No applied RF signal 2.0:1 4 -139 -40 -55 -60 10:1 85 C 2.5:1 dB dBm/Hz dBc dBc dBc Po+28dBm; 1930 to 1990MHz Po+28dBm Po+28dBm Load VSWR 5.0:1 No permanent damage. dBc dBc dBc dBc Po=+28dBm; Vmode=0V Po=+16dBm; Vmode2.0V Po=+28dBm; Vmode=0V Po=+16dBm; Vmode2.0V
% % mA mA
Notes: 1. All parameters met at Tc = +25C, Vcc = +3.4V, Vref = 2.85V and load VSWR 1.2:1, unless otherwise noted. 2. All phase angles. 3. Guaranteed by design.
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US-PCS CDMA, CDMA2000-1X and WCDMA Power Amplifier Module (Preliminary)
RMPA1963
Recommended Operating Conditions
Symbol
f Vcc1, Vcc2 Vref Supply Voltage Reference Voltage (Operating) (Shutdown) Bias Control Voltage (Low-Power) (High-Power) Linear Output Power (High-Power) (Low-Power) Case Operating Temperature -30
Parameter
Operating Frequency
Min
1850 3.0 2.7 0 1.8 0
Typ
3.4 2.85
Max
1910 4.2 3.1 0.5 3.0 0.5 +28 +19 +85
Units
MHz V V V V V dBm dBm C
Vmode
2.0
Pout
+16
Tc
DC Turn-On Sequence
1) Vcc1 = Vcc2 = 3.4V (typical) 2) Vref = 2.85V (typical) 3) High-Power: Vmode = 0V (Pout > 16dBm) Low-Power: Vmode = 2V (Pout < 16dBm)
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RMPA1963
Rev. H
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US-PCS CDMA, CDMA2000-1X and WCDMA Power Amplifier Module (Preliminary)
RMPA1963
Evaluation Board Layout
1 5 6 3 6 5
2
4
7 5
Materials List
Qty
1 2 5 Ref 3 3 2 1 1 A/R A/R
Item No.
1 2 3 4 5 5 (Alt) 6 7 7 (Alt) 8 9
Part Number
G657553-1 V2 #142-0701-841 #2340-5211TN GRM39X7R102K50V ECJ-1VB1H102K C3216X5R1A335M GRM39Y5V104Z16V ECJ-1VB1C104K SN63 SN96 PC Board
Description
SMA Connector Terminals Assembly, RMPA1963 1000pF Capacitor (0603) 1000pF Capacitor (0603) 3.3F Capacitor (1206) 0.1F Capacitor (0603) 0.1F Capacitor (0603) Solder Paste Solder Paste
Vendor
Fairchild Johnson 3M Fairchild Murata Panasonic TDK Murata Panasonic Indium Corp. Indium Corp.
Evaluation Board Schematic
3.3 F Vcc1 SMA1 RF IN 50 Ohm TRL 1000 pF
1 2 4
1000 pF
10
3.3 F Vcc2 50 Ohm TRL
8
SMA2 RF OUT
Vmode Vref 1000 pF
5 11
3,6, 7,9
0.1 F
(package base)
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RMPA1963
Rev. H
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US-PCS CDMA, CDMA2000-1X and WCDMA Power Amplifier Module (Preliminary)
1963
XYTT
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1963
XYTT
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RMPA1963
Package Outline
I/O 1 INDICATOR TOP VIEW 1 2 10 9
(4.00mm
+.100 -.050 )
SQUARE
3 4 5
8
6
1.60mm MAX.
FRONT VIEW .25mm TYP. 3.50mm TYP. See Detail A .40mm .30mm TYP. .85mm TYP. 11 2 1 1.08mm 1.84mm BOTTOM VIEW .18mm DETAIL A. TYP. 3.65mm .10mm .10mm .40mm .45mm
Signal Descriptions
Pin #
1 2 3 4 5 6 7 8 9 10 11
Signal Name
Vcc1 RF In GND Vmode Vref GND GND RF Out GND Vcc2 GND
Description
Supply Voltage to Input Stage RF Input Signal Ground High Power/Low Power Mode Control Reference Voltage Ground Ground RF Output Signal Ground Supply Voltage to Output Stage Paddle Ground
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1963
XYTT
US-PCS CDMA, CDMA2000-1X and WCDMA Power Amplifier Module (Preliminary)
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RMPA1963
Applications Information
CAUTION: THIS IS AN ESD SENSITIVE DEVICE. Precautions to Avoid Permanent Device Damage: * Cleanliness: Observe proper handling procedures to ensure clean devices and PCBs. Devices should remain in their original packaging until component placement to ensure no contamination or damage to RF, DC and ground contact areas. * Device Cleaning: Standard board cleaning techniques should not present device problems provided that the boards are properly dried to remove solvents or water residues. * Static Sensitivity: Follow ESD precautions to protect against ESD damage: - A properly grounded static-dissipative surface on which to place devices. - Static-dissipative floor or mat. - A properly grounded conductive wrist strap for each person to wear while handling devices. * General Handling: Handle the package on the top with a vacuum collet or along the edges with a sharp pair of bent tweezers. Avoiding damaging the RF, DC, and ground contacts on the package bottom. Do not apply excessive pressure to the top of the lid. * Device Storage: Devices are supplied in heat-sealed, moisture-barrier bags. In this condition, devices are protected and require no special storage conditions. Once the sealed bag has been opened, devices should be stored in a dry nitrogen environment. Device Usage: Fairchild recommends the following procedures prior to assembly. * Assemble the devices within 7 days of removal from the dry pack. * During the 7-day period, the devices must be stored in an environment of less than 60% relative humidity and a maximum temperature of 30C * If the 7-day period or the environmental conditions have been exceeded, then the dry-bake procedure, at 125C for 24 hours minimum, must be performed. Solder Materials & Temperature Profile: Reflow soldering is the preferred method of SMT attachment. Hand soldering is not recommended. Reflow Profile * Ramp-up: During this stage the solvents are evaporated from the solder paste. Care should be taken to prevent rapid oxidation (or paste slump) and solder bursts caused by violent solvent out-gassing. A maximum heating rate is 3C/sec. * Pre-heat/soak: The soak temperature stage serves two purposes; the flux is activated and the board and devices achieve a uniform temperature. The recommended soak condition is: 60-180 seconds at 150-200C. * Reflow Zone: If the temperature is too high, then devices may be damaged by mechanical stress due to thermal mismatch or there may be problems due to excessive solder oxidation. Excessive time at temperature can enhance the formation of inter-metallic compounds at the lead/board interface and may lead to early mechanical failure of the joint. Reflow must occur prior to the flux being completely driven off. The duration of peak reflow temperature should not exceed 20 seconds. Soldering temperatures should be in the range 255-260C, with a maximum limit of 260C. * Cooling Zone: Steep thermal gradients may give rise to excessive thermal shock. However, rapid cooling promotes a finer grain structure and a more crack-resistant solder joint. The illustration below indicates the recommended soldering profile. Solder Joint Characteristics: Proper operation of this device depends on a reliable void-free attachment of the heat sink to the PWB. The solder joint should be 95% void-free and be a consistent thickness. Rework Considerations: Rework of a device attached to a board is limited to reflow of the solder with a heat gun. The device should be subjected to no more than 15C above the solder melting temperature for no more than 5 seconds. No more than 2 rework operations should be performed.
Recommended Solder Reflow Profile
260
Ramp-Up Rate 3 C/sec max
Peak temp 260 +0/-5 C 10 - 20 sec
Temperature (C)
217 200
Time above liquidus temp 60 - 150 sec
150
Preheat, 150 to 200 C 60 - 180 sec
100
Ramp-Up Rate 3 C/sec max
50 25
Time 25 C/sec to peak temp 6 minutes max
Ramp-Down Rate 6 C/sec max
Time (Sec)
6
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US-PCS CDMA, CDMA2000-1X and WCDMA Power Amplifier Module (Preliminary)
RMPA1963
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks.
DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 2. A critical component is any component of a life 1. Life support devices or systems are devices or support device or system whose failure to perform can systems which, (a) are intended for surgical implant into be reasonably expected to cause the failure of the life the body, or (b) support or sustain life, or (c) whose support device or system, or to affect its safety or failure to perform when properly used in accordance with instructions for use provided in the labeling, can be effectiveness. reasonably expected to result in significant injury to the user. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Product Status Formative or In Design Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design.
Preliminary
First Production
No Identification Needed
Full Production
Obsolete
Not In Production
This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only.
Rev. I15
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